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| 2SC5246 Silicon NPN Epitaxial ADE-208-264 1st. Edition Application VHF / UHF wide band amplifier Features * High gain bandwidth product fT = 12 GHz typ * High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5246 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is "ZC-". Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 20 80 150 -55 to +150 Unit V V V mA mW C C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25C) Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO hFE Cob fT PG NF Min -- -- -- 50 -- 9 14 -- Typ -- -- -- 100 0.3 12 16.5 1.6 Max 10 1 10 160 0.8 -- -- 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 10 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC5246 Collector Power Dissipation Curve Collector Power Dissipation Pc (mW) 160 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current 200 160 120 120 80 80 40 40 0 0.01 VCE = 5 V Pulse Test 0.1 1 10 100 0 50 100 150 Ambient Temperature Ta (C) 200 Collector Current I C (mA) 20 Gain Bandwidth Product f T (GHz) Collector Output Capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current 1.0 0.8 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 16 VCE = 5V 12 0.6 8 1V 0.4 4 0 1 2 10 20 5 50 Collector Current I C (mA) 100 0.2 0 0.1 0.2 0.5 1 2 5 10 20 Collector to Base Voltage V CB (V) 3 2SC5246 20 Power Gain vs. Collector Current f = 900 MHz Power Gain PG (dB) 16 VCE = 5V Noise Figure NF (dB) 8 10 Noise Figure vs. Collector Current f = 900 MHz 12 VCE = 1V 6 VCE = 1V 4 8 4 0 0.1 0.2 2 VCE = 5V 0 0.1 0.2 0.5 1 2 5 10 20 Collector Current I C (mA) 50 0.5 1 2 5 10 20 Collector Current I C (mA) 50 4 2SC5246 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 3 / div. 60 -150 -30 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.04 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -5 -4 -3 -2 -1 Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) Condition: V CE = 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) 5 2SC5246 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 120 S21 Parameter vs. Frequency 90 Scale: 2 / div. 60 -150 -30 Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.04 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 10 mA) 6 2SC5246 S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.793 0.702 0.594 0.495 0.415 0.349 0.293 0.241 0.214 0.181 ANG. -18.9 -36.0 -49.4 -59.9 -69.1 -76.8 -83.0 -90.2 -93.9 -103 S21 MAG. 9.98 8.88 7.63 6.54 5.65 4.94 4.37 3.93 3.57 3.28 ANG. 161 144 131 120 112 105 99.4 94.7 90.2 89.3 S12 MAG. 0.026 0.047 0.063 0.074 0.085 0.093 0.102 0.110 0.119 0.127 ANG. 78.6 70.2 64.6 62.4 61.1 60.5 61.3 61.7 61.9 63.4 S22 MAG. 0.955 0.864 0.768 0.684 0.620 0.572 0.535 0.508 0.486 0.469 ANG. -12.0 -22.7 -30.3 -34.8 -38.0 -40.1 -42.0 -43.7 -45.0 -46.4 S Parameter (VCE = 5 V, IC = 10 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.679 0.552 0.445 0.342 0.283 0.228 0.191 0.166 0.136 0.123 ANG. -26.4 -48.9 -64.5 -76.7 -88.1 -98.3 -105 -119 -124 -140 S21 MAG. 13.2 10.8 8.71 7.12 5.99 5.15 4.50 4.01 3.62 3.31 ANG. 155 135 121 111 104 97.8 93.0 88.6 84.6 81.1 S12 MAG. 0.024 0.041 0.054 0.064 0.073 0.083 0.092 0.102 0.112 0.122 ANG. 76.2 69.0 64.8 64.5 64.5 65.7 66.8 67.9 68.3 69.5 S22 MAG. 0.924 0.794 0.687 0.611 0.559 0.526 0.501 0.483 0.470 0.460 ANG. -14.6 -25.1 -30.6 -33.3 -34.9 -36.0 -37.3 -38.5 -40.1 -41.3 7 2SC5246 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.764 0.651 0.545 0.439 0.366 0.308 0.263 0.228 0.205 0.175 ANG. -23.4 -43.6 -59.5 -72.2 -83.3 -92.9 -102 -113 -120 -131 S21 MAG. 9.82 8.47 7.13 5.98 5.10 4.46 3.92 3.51 3.19 2.92 ANG. 159 140 126 116 108 101 95.3 90.4 86.0 82.3 S12 MAG. 0.028 0.051 0.067 0.079 0.088 0.097 0.105 0.114 0.123 0.132 ANG. 77.1 67.8 62.1 59.7 58.7 59.0 59.7 60.4 61.1 62.5 S22 MAG. 0.938 0.830 0.727 0.641 0.581 0.537 0.505 0.481 0.461 0.447 ANG. -13.7 -24.8 -31.9 -36.7 -39.2 -41.3 -43.1 -44.8 -46.5 -47.8 S Parameter (VCE = 1 V, IC = 10 mA, ZO = 50 ) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.570 0.443 0.376 0.333 0.317 0.309 0.305 0.312 0.309 0.320 ANG. -52.3 -89.8 -115 -134 -149 -161 -171 -180 175 166 S21 MAG. 10.3 7.23 5.37 4.20 3.43 2.93 2.53 2.25 2.03 1.84 ANG. 143 120 107 97.7 91.0 85.0 80.1 76.1 72.0 68.6 S12 MAG. 0.030 0.046 0.056 0.064 0.073 0.082 0.091 0.101 0.112 0.123 ANG. 66.1 56.8 56.7 58.4 60.8 63.8 65.8 68.1 69.9 71.4 S22 MAG. 0.811 0.665 0.586 0.534 0.519 0.505 0.495 0.487 0.481 0.476 ANG. -17.9 -25.2 -27.6 -29.0 -30.6 -32.5 -34.8 -37.6 -40.3 -43.1 8 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 0.1 14.5 Min 0.6 0.6 Max 0.4 0.1 1.27 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) SPAK -- -- 0.10 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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